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| SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTC2983D/L A C KTA1225D/L EPITAXIAL PLANAR PNP TRANSISTOR I J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -160 -160 -5 -1.5 -0.3 1.0 10 150 -55 150 UNIT V V V A A W A C H F 1 2 F 3 P L DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.20 2.00 + _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M Q D 1. BASE 2. COLLECTOR 3. EMITTER DPAK I J D O H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.0 + 0.2 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX Q K 1. BASE 2. COLLECTOR 3. EMITTER E B IPAK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification O:70~140, Y:120~240 ) TEST CONDITION VCB=-160V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCE=-5V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-500mA VCE=-10V, IC=-100mA VCB=-10V, IE=0, f=1MHz MIN. -160 -5.0 70 TYP. 100 30 MAX. -1.0 -1.0 240 -1.5 -1.0 V V MHz pF UNIT A A V V SYMBOL ICBO IEBO V(BR)CEO V(BR)EBO hFE(Note) VCE(sat) VBE fT Cob 2003. 3. 27 Revision No : 2 1/3 KTA1225D/L I C - VCE -1.0 COLLECTOR CURRENT I C (A) -0.8 -0.6 -0.4 -0.2 0 0mA A 2m -1 hFE - I C COMMON EMITTER Tc=25 C -20 mA DC CURRENT GAIN h FE -8m A 300 Tc=100 C Tc=25 C -6mA -4mA 100 Tc=-25 C 50 30 COMMON EMITTER VCE =-5V I B =-2mA 0 -2 -4 -6 -8 -10 -12 -14 -16 10 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 C 100 Tc= I C /I B =10 I C - VBE -1.0 COLLECTOR CURRENT IC (A) COMMON EMITTER VCE =-5V Tc=100 C Tc=25 C Tc=-25 C COMMON EMITTER -0.8 -0.6 -0.4 -0.2 0 -0.1 -0.05 -0.03 -0.003 -0.01 -0.03 -0.1 Tc=25 C Tc=-25 C -0.3 -1 -3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE VBE (V) COLLECTOR POWER DISSIPAZTION PC (W) f T - IC TRANSITION FREQUENCY f T (MHz) 300 Pc - Ta 30 25 20 15 10 5 0 0 1 1 Tc=25 C 2 Ta=25 C 100 50 30 COMMON EMITTER VCE =-10V Tc=25 C 2 0 -0.005 -0.01 -0.03 -0.1 -0.3 -1 20 40 60 80 100 120 140 160 180 COLLECTOR CURRENT I C (A) AMBIENT TEMPERATURE Ta ( C) 2003. 3. 27 Revision No : 2 2/3 KTA1225D/L SAFE OPERATING AREA 5 3 COLLECTOR CURRENT I C (A) 1.5 1 0.5 0.3 I C MAX(PULSED) * I C MAX (CONTINUOUS) DC s* 1m * ms 10 s* 0m 10 OP Tc ER =2 AT 5 I C ON 0.1 0.05 0.02 5 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 10 30 50 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 2 3/3 |
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